Sintered complex oxide and sputtering target comprising same

ABSTRACT

A composite oxide sintered body includes In 2 Ga 2 ZnO 7  having a homologous crystal structure, and has a relative density of 90% or more, and an average crystal grain size of 10 μm or less.

TECHNICAL FIELD

The invention relates to a composite oxide sintered body that includes In₂Ga₂ZnO₇ having a homologous crystal structure, a sputtering target that includes the composite oxide sintered body, an amorphous oxide film obtained using the sputtering target, and a thin film transistor that includes the amorphous oxide film.

BACKGROUND ART

A field effect transistor has been widely used as a unit electronic device of a semiconductor memory integrated circuit, a high-frequency signal amplifier device, a liquid crystal drive device, and the like. The field effect transistor is an electronic device that is most widely put to practical use at present.

In recent years, development of displays has rapidly progressed, and a thin film transistor (TFT) has been widely used for a display (e.g., liquid crystal display (LCD), electroluminescence (EL) display, or field emission display (FED)) as a switching device for applying a driving voltage to the display element.

A silicon semiconductor compound is most widely used as a material for the thin film transistor. A silicon single crystal is generally used for a high-frequency signal amplifier device, an integrated circuit device, and the like for which a high-speed operation is required, and amorphous silicon is generally used for a liquid crystal drive device and the like for which an increase in area is required.

However, since a high temperature (e.g., 800° C. or more) is required to crystallize a crystalline silicon thin film, it is difficult to form a crystalline silicon thin film on a glass substrate or an organic substrate. Therefore, a crystalline silicon thin film can only be formed on an expensive heat-resistant substrate (e.g., silicon wafer or quartz). Moreover, a large amount of energy and a large number of steps are required to produce a crystalline silicon thin film.

Since the device structure of a thin film transistor (TFT) that utilizes a crystalline silicon thin film is normally limited to a top-gate structure, it is difficult to reduce cost by reducing the number of masks, for example.

An amorphous silicon semiconductor (amorphous silicon) thin film can be formed at a relatively, low temperature, but can achieve a low switching speed as compared with a crystalline silicon thin film. Therefore, when using an amorphous silicon semiconductor thin film for a switching device for driving a display, a high-speed animation may not be displayed.

A silicon-based semiconductor film is mainly used for a switching device that drives a display. This is because a silicon-based thin film exhibits excellent stability, excellent workability, a high switching speed, and the like. A silicon-based thin film is generally formed by chemical vapor deposition (CVD).

A thin film transistor (TFT) may have an inverted staggered structure in which a gate electrode, a gate insulating layer, a semiconductor layer (e.g., hydrogenated amorphous silicon (a-Si:H)), a source electrode, and a drain electrode are stacked on a substrate (e.g., glass substrate). In the field of large-area devices (e.g., image sensors), a thin film transistor (TFT) having an inverted staggered structure is used as a driver device of a flat panel display (e.g., active matrix liquid crystal display). When using amorphous silicon in such an application, an increase in operation speed has been desired along with enhancement in functionality.

In view of the above situation, an oxide semiconductor thin film that exhibits excellent stability as compared with a silicon-based semiconductor thin film has attracted attention.

However, it is difficult to industrially apply a transparent semiconductor thin film formed of a metal oxide (particularly a transparent semiconductor thin film formed by crystallizing zinc oxide at a high temperature) due to low field-effect mobility (hereinafter may be referred to as “mobility”) (about 1 cm²/V·sec), a small on-off ratio, and occurrence of leakage current.

A crystalline oxide semiconductor that contains zinc oxide has been extensively studied, but has the following problems when film formation is conducted by sputtering.

For example, an oxide semiconductor film formed of a conductive transparent oxide that contains zinc oxide as the main component tends to produce a large number of carrier electrons due to oxygen defects, so that it is difficult to reduce conductivity. Moreover, an abnormal discharge occurs during film formation by sputtering, so that the film formation stability is impaired. This results in deterioration in uniformity and reproducibility of the resulting film.

Therefore, when using an oxide semiconductor film formed of a conductive transparent oxide that contains zinc oxide as the main component as an active layer (channel layer) of a thin film transistor (TFT), for example, a large amount of current flows between the source electrode and the drain electrode even if the gate voltage is not applied (i.e., a normally-off operation cannot be implemented). It is also difficult to increase the on-off ratio of the transistor.

Moreover, the resulting thin film transistor (TFT) may exhibit poor TFT characteristics (e.g., low mobility, small on-off ratio, a large amount of leakage current, unclear pinch-off, and tendency to be normally-on state), and may not be produced by wet etching due to poor chemical resistance. Therefore, the production process and the usage environment are limited.

An oxide semiconductor film formed of a conductive transparent oxide that contains zinc oxide as the main component must be formed under high pressure (i.e., the film-forming rate decreases) in order to improve the characteristics, and requires a high-temperature process (700° C. or more). This makes industrial production difficult. A thin film transistor (TFT) that utilizes an oxide semiconductor film formed of a conductive transparent oxide that contains zinc oxide as the main component exhibits poor TFT characteristics (e.g., mobility) when using a bottom-gate structure. It is necessary to employ a top-gate structure and increase the film thickness to 100 nm or more in order to improve the TFT characteristics.

Hosokawa et al. discovered an n-type semiconductor material that contains indium oxide and zinc oxide (Patent Document 4). Since then an oxide semiconductor that contains indium oxide and zinc oxide has attracted attention. In recent years, use of an amorphous oxide semiconductor film that contains indium oxide, gallium oxide, and zinc oxide for a thin film transistor has been studied. Production of an amorphous oxide semiconductor film that contains indium oxide, gallium oxide, and zinc oxide by sputtering that ensures high mass productivity on an industrial scale has also been studied.

Patent Document 1 discloses a sputtering target that contains In₂Ga₂ZnO₇ having a homologous structure. Patent Documents 2 and 3 disclose a method of producing a sputtering target that contains InGaZnO₄ having a homologous structure. However, mass production of a display panel that includes a thin film transistor produced using a sputtering target that contains In₂Ga₂ZnO₇ having a homologous structure, and practical application of such a sputtering target (e.g., solution to problems that may occur during mass production) have not been studied.

RELATED ART DOCUMENTS Patent Documents

Patent Document 1: JP-A-H8-245220

Patent Document 2: JP-A-2007-223849

Patent Document 3: JP-A-2007-73312

Patent Document 4: JP-A-2006-114928

SUMMARY OF THE INVENTION

An object of the invention is to provide a composite oxide sintered body that makes it possible to produce a TFT panel with improved uniformity and reproducibility of the TFT characteristics, and a sputtering target including the same.

The invention provides the following composite oxide sintered body and the like.

1. A composite oxide sintered body including In₂Ga₂ZnO₇ having a homologous crystal structure, and having a relative density of 90% or more.

2. The composite oxide sintered body according to 1, the composite oxide sintered body having an average crystal grain size of 10 μm or less.

3. The composite oxide sintered body according to 1 or 2, the composite oxide sintered body consisting essentially of In₂Ga₂ZnO₇ having a homologous crystal structure.

4. The composite oxide sintered body according to 1 or 2, further including ZnGa₂O₄ having a spinel structure.

5. The composite oxide sintered body according to 1 or 2, further including In₂O₃ having a bixbyite structure.

6. The composite oxide sintered body according to 1 or 2, further including ZnGa₂O₄ having a spinet structure, and In₂O₃ having a bixbyite structure.

7. The composite oxide sintered body according to any one of 1 to 6, the composite oxide sintered body having a bulk resistance of 30 mΩ·cm or less.

8. The composite oxide sintered body according to any one of 1 to 7, the composite oxide sintered body having a variation in relative density in a plane direction of 1% or less, and an average hole count of 800 or less per mm².

9. The composite oxide sintered body according to any one of 1 to 8, the composite oxide sintered body not comprising a β-Ga₂O₃ phase.

10. The composite oxide sintered body according to any one of 1 to 9, wherein the atomic ratio of the composite oxide sintered body satisfies the following expressions: 0.30≦In/(In+Zn+Ga)≦0.60, 0.30≦Ga/(In+Zn+Ga)≦0.60, and 0.10≦Zn/(In +Zn+Ga)≦0.40.

11. The composite oxide sintered body according to any one of 1 to 10, further including a metal element having a positive valence of 4 or more, the atomic ratio of the metal element having a positive valence of 4 or more to the total metal elements being 0.0001 to 0.2. 12. The composite oxide sintered body according to 11, wherein the metal element having a positive valence of 4 or more is one or more elements selected from tin, zirconium, germanium, cerium, niobium, tantalum, molybdenum, and tungsten. 13. A method of producing a composite oxide sintered body including producing a shaped body using an indium oxide powder having a specific surface area of 4 to 14 m²/g, a gallium oxide powder having a specific surface area of 4 to 14 m²/g, and a zinc oxide powder having a specific surface area of 2 to 13 m²/g, and sintering the shaped body at 1250 to 1490° C. for 2 to 35 hours in an oxygen atmosphere. 14. The method according to 13, comprising mixing an indium oxide powder having a specific surface area of 6 to 10 m²/g, a gallium oxide powder having a specific surface area of 5 to 10 m²/g, and a zinc oxide powder having a specific surface area of 2 to 4 m²/g to obtain a powder mixture having a specific surface area of 5 to 8 m²/g, increasing the specific surface area of the powder mixture by 1.0 to 3.0 m²/g by mixing and grinding the powder mixture using an agitator bead mill with a wet medium, and shaping the powder mixture that has been increased in specific surface area to obtain a shaped body. 15. A sputtering target comprising the composite oxide sintered body according to any one of 1 to 12. 16. An amorphous oxide film obtained by sputtering using the sputtering target according to 15 at a film-forming temperature between room temperature and 450° C., the amorphous oxide film having an electron carrier density of less than 10¹⁸/cm³. 17. A thin film transistor comprising the amorphous oxide film according to 16 as a channel layer.

The invention thus provides a composite oxide sintered body that makes it possible to produce a TFT panel with improved uniformity and reproducibility of the TFT characteristics, and a sputtering target including the composite oxide sintered body.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view illustrating a thin film transistor according to one embodiment of the invention.

MODE FOR CARRYING OUT THE INVENTION

A composite oxide sintered body according to the invention includes In₂Ga₂ZnO₇ having a homologous crystal structure, and has a relative density of 90% or more.

The term “homologous crystal structure” refers to a long-period natural superlattice structure in which crystal layers of different substances are stacked.

When the crystal period or the thickness of each thin layer is at a nanometer level, a combination of the chemical composition and the thickness of each layer produces inherent characteristics that differ from the characteristics of a single substance or a mixed crystal in which the layers are uniformly mixed.

The presence or absence of the crystal structure of the homologous phase may be determined by determining whether or not the X-ray diffraction pattern of a powder obtained by grinding a target coincides with the X-ray diffraction pattern of the crystal structure of the homologous phase estimated from the compositional ratio, for example. Specifically, the presence or absence of the crystal structure of the homologous phase may be determined by determining whether or not the X-ray diffraction pattern of a target coincides with the X-ray diffraction pattern of the crystal structure of the homologous phase obtained from the Joint Committee of Powder Diffraction Standards (JCPDS) card.

The presence or absence of a spinel structure and a bixbyite structure described later may also be determined by the above method.

The composite oxide sintered body according to the invention preferably includes only In₂Ga₂ZnO₇ having a homologous crystal structure. When the composite oxide sintered body according to the invention includes only In₂Ga₂ZnO₇ having a homologous crystal structure, a variation in relative density can be suppressed. Moreover, the resistance of the composite oxide sintered body can be reduced by a reduction treatment.

The composite oxide sintered body according to the invention that includes In₂Ga₂ZnO₇ having a homologous crystal structure may further includes an additional compound. In this case, the composite oxide sintered body is preferably one of the following composite oxide sintered bodies (1) to (3).

(1) Composite oxide sintered body including In₂Ga₂ZnO₇ having a homologous crystal structure and ZnGa₂O₄ having a spinel structure

(2) Composite oxide sintered body including In₂Ga₂ZnO₇ having a homologous crystal structure and In₂O₃ having a bixbyite structure

(3) Composite oxide sintered body including In₂Ga₂ZnO₇ having a homologous crystal structure, ZnGa₂O₄ having a spinel structure, and In₂O₃ having a bixbyite structure

When the composite oxide sintered body according to the invention includes ZnGa₂O₄ having a spinel structure, the relative density of a target produced using the composite oxide sintered body according to the invention can be easily increased even if the sintering temperature is relatively low, and production of Ga₂O₃ (i.e., a compound having high resistance) can be suppressed.

When the composite oxide sintered body according to the invention includes In₂O₃ having a bixbyite structure, the bulk resistance of the resulting target can be reduced even if a reduction treatment is omitted, or performed under milder conditions. Moreover, the specific resistivity can be efficiently reduced when the composite oxide sintered body includes Sn.

The composite oxide sintered body according to the invention has a relative density of 90% or more, preferably 95% or more, and more preferably 98% or more. If the composite oxide sintered body has the relative density of 90% or more, the bulk resistance of the composite oxide sintered body can be reduced. Moreover, the uniformity and the reproducibility of the TFT characteristics of the resulting thin film transistor can be improved.

The upper limit of the relative density is 100%, for example.

The composite oxide sintered body according to the invention preferably has an average crystal grain size of 10 μm or less, more preferably 5 μm or less, and still more preferably 4 μm or less. If the composite oxide sintered body has an average crystal grain size of 10 μm or less, the uniformity and the reproducibility of the TFT characteristics of the resulting thin film transistor can be improved.

The composite oxide sintered body according to the invention preferably has a bulk resistance of 30 mΩ·cm or less, more preferably 10 mΩ·cm or less, and still more preferably 5 mΩ·cm or less. If the composite oxide sintered body has a bulk resistance of 30 mΩ·cm or less, DC sputtering can be performed, and the uniformity and the reproducibility of the TFT characteristics of the resulting thin film transistor can be improved.

The composite oxide sintered body according to the invention preferably has a variation in relative density in the plane direction of 1% or less, and an average hole count of 800 or less per mm².

The composite oxide sintered body more preferably has a variation in relative density in the plane direction of 0.5% or less, and still more preferably 0.4% or less. If the composite oxide sintered body has a variation in relative density in the plane direction of 1% or less, the uniformity and the reproducibility of the TFT characteristics of the resulting thin film transistor can be improved.

Note that the term “plane direction” used herein refers to a direction along a side (erosion side) of the composite oxide sintered body that is ground when producing a target, and is irradiated with plasma.

The term “variation in relative density in the plane direction” used herein refers to a variation in density of a plurality of pieces obtained by cutting the sintered body along the side that is irradiated with plasma.

The composite oxide sintered body more preferably has an average hole count of 500 or less per mm², still more preferably 300 or less per mm², and particularly preferably 100 or less per mm². If the composite oxide sintered body has an average hole count of 800 or less per mm², the uniformity and the reproducibility of the TFT characteristics of the resulting thin film transistor can be improved.

The composite oxide sintered body according to the invention preferably does not include a β-Ga₂O₃ phase. If the composite oxide sintered body does not include a β-Ga₂O₃ phase, the bulk resistance and a variation in relative density of the composite oxide sintered body can be reduced. Moreover, the uniformity and the reproducibility of the TFT characteristics of the resulting thin film transistor can be improved.

The presence or absence of a β-Ga₂O₃ phase may be determined by determining the presence or absence of an X-ray diffraction peak attributed to β-Ga₂O₃ (JCPDS card No. 43-1012).

The atomic ratio of In, Ga, and Zn included in the composite oxide sintered body according to the invention preferably satisfies the following expressions. 0.30≦In/(In+Zn+Ga)≦0.60 0.30≦Ga/(In+Zn+Ga)≦0.60 0.10≦Zn/(In+Zn+Ga)≦0.40

The atomic ratio of In, Ga, and Zn more preferably satisfies the following expressions. 0.35≦In/(In+Zn+Ga)≦0.50 0.35≦Ga/(In+Zn+Ga)≦0.50 0.10≦Zn/(In +Zn+Ga)≦0.30

The atomic ratio of In, Ga, and Zn still more preferably satisfies the following expressions. 0.35≦In/(In+Zn+Ga)≦0.45 0.35≦Ga/(In+Zn+Ga)≦0.45 0.15≦In/(In +Zn+Ga)≦0.25

If the atomic ratio of In, Ga, and Zn included in the composite oxide sintered body satisfies the above expressions, In₂Ga₂ZnO₇ having a homologous crystal structure is easily produced in the sintered body (i.e., another crystal structure is rarely produced).

The atomic ratio of In, Ga, and Zn may be adjusted to the above range by utilizing an oxide of each element as a raw material for the composite oxide sintered body according to the invention.

The composite oxide sintered body according to the invention preferably includes a metal element having a positive valence of 4 or more, the atomic ratio of the metal element having a positive valence of 4 or more to the total metal elements being 0.0001 to 0.2.

If the composite oxide sintered body includes a metal element having a positive valence of 4 or more, the bulk resistance of the sintered body can be reduced, and an abnormal discharge during sputtering can be suppressed.

If the atomic ratio of the metal element having a positive valence of 4 or more to the total metal elements is less than 0.0001, the effect of reducing the bulk resistance may be insufficient. If the atomic ratio of the metal element having a positive valence of 4 or more to the total metal elements exceeds 0.2, the stability of the resulting amorphous oxide film may be insufficient.

Examples of a preferable metal element having a positive valence of 4 or more include tin, zirconium, germanium, cerium, niobium, tantalum, molybdenum, and tungsten. Among these, tin, cerium, and zirconium are more preferable.

The metal element having a positive valence of 4 or more is added to the raw material of the composite oxide sintered body according to the invention as a metal oxide so that the content of the metal element is within the above range, for example.

The composite oxide sintered body according to the invention may have oxygen deficiency. Specifically, the composite oxide sintered body need not necessarily satisfy the stoichiometric ratio.

The composite oxide sintered body according to the invention preferably has a nitrogen content of 5 ppm (atomic ppm) or less. If the composite oxide sintered body has a nitrogen content of 5 ppm or less, the nitrogen content in the resulting semiconductor film decreases, so that the reliability and the uniformity of the resulting TFT can be improved.

If the composite oxide sintered body has a nitrogen content of higher than 5 ppm, an abnormal discharge of the resulting target may occur during sputtering, and the amount of gas adsorbed on the surface of the target may not be sufficiently reduced. Moreover, nitrogen and indium included in the target may react during sputtering to produce black indium nitride (MN), which may be mixed in the semiconductor film, and may decrease the yield. It is assumed that nitrogen atoms become mobile ions when the nitrogen content is higher than 5 ppm, and gather at the semiconductor interface to form a trap due to gate voltage stress, or nitrogen serves as a donor, and decreases the performance.

A method of producing a composite oxide sintered body according to the invention utilizes an indium oxide powder, a zinc oxide powder, and a gallium oxide powder as raw material powders. A composite oxide of these compounds or the like may be used as the raw material powder.

The purity of each raw material powder is normally 99.9% (3N) or more, preferably 99.99% (4N) or more, more preferably 99.995% or more, and particularly preferably 99.999% (5N) or more. If the purity of each raw material powder is less than 99.9% (3N), deterioration in semiconductor properties, reliability, and the like may occur due to impurities. In particular, if the Na content in each raw material powder is less than 100 ppm, the reliability of the resulting thin film transistor is improved.

The method of producing a composite oxide sintered body according to the invention utilizes an indium oxide powder having a specific surface area of 4 to 14 m²/g, a gallium oxide powder having a specific surface area of 4 to 14 m²/g, and a zinc oxide powder having a specific surface area of 2 to 13 m²/g as starting raw materials, and preferably utilizes a powder mixture having a specific surface area of 5 to 8 m²/g as a starting raw material, the powder mixture being prepared by mixing an indium oxide powder having a specific surface area of 6 to 10 m²/g, a gallium oxide powder having a specific surface area of 5 to 10 m²/g, and a zinc oxide powder having a specific surface area of 2 to 4 m²/g.

A variation in relative density of the resulting composite oxide sintered body can be reduced by utilizing these starting raw materials, so that the uniformity and the reproducibility of TFT characteristics can be improved.

Each raw material powder preferably has almost the same specific surface area. This makes it possible to more efficiently achieve grinding and mixing described later. The ratio of the specific surface area of each raw material powder is preferably 1/4 to 4/1, and more preferably 1/2 to 2/1. If the ratio of the specific surface area of each raw material powder is outside the above range, it may be difficult to efficiently achieve grinding and mixing, so that the raw material powder particles may remain in the sintered body.

The mixing ratio of the indium oxide powder, the gallium oxide powder, and the zinc oxide powder is not particularly limited, but is preferably adjusted so that the atomic ratio “In:Ga:Zn” is 2:2:1.

The starting raw materials are mixed and ground using an agitator bead mill with a wet medium or the like to prepare a powder mixture. In this case, the starting raw materials are preferably ground so that the specific surface area of the powder mixture is increased by 1.0 to 3.0 m²/g due to mixing and grinding, or the ground powder mixture preferably has an average median diameter of about 0.4 to about 1.2 μm, and more preferably about 0.6 to about 1 μm.

Note that the mixing method is not particularly limited. The starting raw materials may be mixed by a dry method.

Use of the above powder mixture makes it possible to obtain a composite oxide sintered body having a high density without performing a pre-firing step and a reduction step. The production process is simplified by omitting a pre-firing step. It is also possible to prevent a situation in which a variation in composition and a variation in relative density increase due to sublimation of zinc that may occur during a pre-firing step.

If the specific surface area of the powder mixture is increased by less than 1.0 m²/g due to mixing and grinding, or the ground powder mixture has an average median diameter of more than 1 μm, the sintered density of the resulting composite oxide sintered body may not sufficiently increase. If the specific surface area of the powder mixture is increased by more than 3.0 m²/g due to mixing and grinding, or the ground powder mixture has an average median diameter of less than 0.4 μm, contamination (i.e., the amount of impurities mixed) from a grinder or the like during grinding may increase.

Note that the specific surface area may be measured by the BET method, and the average median diameter may be measured using a grain size distribution analyzer. The specific surface area and the average median diameter may be adjusted by grinding the powder mixture by a dry grinding method, a wet grinding method, or the like.

The powder mixture is then shaped to obtain a shaped body. The powder mixture may be shaped by a wet method or dry method.

Examples of the dry method include a cold press method, a hot press method, and the like.

When using a cold press method, the ground powder mixture is dried using a spray dryer or the like, and shaped to obtain a shaped body. The powder mixture may be shaped by pressing, cold isostatic pressing, die shaping, casting, injection molding, or the like. It is preferable to shape the powder mixture by pressing such as cold isostatic pressing (CIP) in order to obtain a sintered body (target) having a high sintered density.

The reproducibility is improved by performing cold isostatic pressing (CIP), hot isostatic pressing (HIP), or the like after pressing (uniaxial pressing).

CIP (cold isostatic pressing or isostatic pressing apparatus) is preferably performed at a surface pressure of 800 to 4000 kgf/cm² for 0.5 to 60 minutes, more preferably performed at a surface pressure of 1900 to 3500 kgf/cm² for 3 to 45 minutes, and particularly preferably performed at a surface pressure of 2000 to 3000 kgf/cm² for 4 to 30 minutes. This makes it possible to reduce a variation in composition inside the shaped body (i.e., a uniform shaped body can be obtained), for example.

If the surface pressure is less than 800 kgf/cm², the sintered body may have low density or high resistance. A large apparatus may be required to achieve a surface pressure of more than 4000 kgf/cm² (i.e., it may be uneconomical). If the holding time is less than 0.5 minutes, the sintered body may have low density or high resistance. If the holding time exceeds 60 minutes, it may be uneconomical.

As mentioned above, the powder mixture is preferably dried (granulated) using a spray dryer. The powder mixture may be granulated by air-drying. In this case, however, the Ga₂O₃ powder, the In₂O₃ powder, and the ZnO powder may be separated due to a difference in sedimentation rate caused by the difference in specific gravity between the raw material powders, so that a uniform granulated powder may not be obtained. If a sintered body is produced using such a non-uniform granulated powder, tin oxide may aggregate, or a variation in relative density may increase. As a result, the yield of the resulting TFT may decrease, or a variation in yield of the TFT may increase. The above problem does not occur when granulating the powder mixture using a spray dryer since the powder mixture can be quickly dried.

A filtration shaping method (see JP-A-11-286002) may be used as the wet method, for example. The filtration shaping method includes removing (discharging) water from a ceramic raw material slurry under reduced pressure to obtain a shaped body.

A shaping aid such as polyvinyl alcohol, methyl cellulose, polywax, or oleic acid may be used when shaping the mixture.

The resulting shaped body is then sintered to produce a composite oxide sintered body.

The shaped body may be sintered in an oxygen atmosphere while circulating oxygen, or may be sintered under pressure.

When sintering the shaped body in an oxygen atmosphere, the oxygen flow rate is preferably 2 to 20 l/min. Vaporization of zinc can be suppressed by sintering the shaped body in an oxygen atmosphere, so that a composite oxide sintered body that has a small average hole count, high relative density, and a small variation in relative density, and is free from voids can be obtained. Moreover, since a composite oxide sintered body obtained by sintering the shaped body in an oxygen atmosphere has high density, occurrence of nodules and production of particles during sputtering can be suppressed, so that an oxide semiconductor film having excellent characteristics can be obtained. If the oxygen flow rate is outside the above range, oxygen deficiency may be suppressed due to introduction of oxygen, so that the specific resistivity of the sintered body may increase.

The sintering temperature is preferably 1250 to 1490° C., more preferably 1250 to 1450° C., and still more preferably 1350 to 1440° C. If the sintering temperature is 1250° C. or more, the relative density of the sintered body can be improved, and a variation in relative density can be reduced. Moreover, the average hole count can be reduced. If the sintering temperature is 1490° C. or less, an increase in crystal grain size can be suppressed, and the average hole count can be reduced.

If the sintering temperature is within the above range, an In₂Ga₂ZnO₇ crystal is easily produced.

The sintering time is preferably 2 to 35 hours, more preferably 2.5 to 25 hours, and particularly preferably 3 to 20 hours. If the sintering time is 2 hours or more, the relative density of the sintered body can be improved, and a variation in relative density can be reduced. If the sintering time is 35 hours or less, an increase in crystal grain size can be suppressed, and the average hole count can be reduced.

If the sintering time is within the above range, an In₂Ga₂ZnO₇ crystal is easily produced.

When sintering the shaped body, it is preferable to employ a temperature increase rate of 30° C./h or more at a temperature of 1000° C. or more, and employ a temperature decrease rate of 30° C./h or more during cooling. If the temperature increase rate at a temperature of 1000° C. or more is less than 30° C./h, the number of holes (pinholes) may increase due to decomposition of the oxide. If the temperature decrease rate during cooling is less than 30° C./h, the compositional ratio of In and Ga may change.

The method of producing a composite oxide sintered body according to the invention may include a reduction step.

The reduction step is arbitrarily performed to reduce the resulting sintered body so that the entire sintered body has uniform bulk resistance.

The sintered body may be reduced by utilizing a reducing gas, firing the sintered body under vacuum, or utilizing an inert gas, for example.

Examples of the reducing gas include hydrogen, methane, carbon monoxide, a mixture of these gases and oxygen, and the like.

Examples of the inert gas include nitrogen, argon, a mixture of these gases and oxygen, and the like.

The sintered body is normally reduced at 300 to 1200° C., and preferably 500 to 800° C. The sintered body is normally reduced for 0.01 to 10 hours, and preferably 0.05 to 5 hours.

The method of producing a composite oxide sintered body according to the invention has been described above. A composite oxide sintered body that includes only In₂Ga₂ZnO₇ having a homologous crystal structure may be obtained by mixing an indium oxide powder having a specific surface area of 8 m²/g, a gallium oxide powder having a specific surface area of 8 m²/g, and a zinc oxide powder having a specific surface area of 5 m²/g to obtain a powder mixture, granulating the powder mixture using a spray dryer, and sintering the granulated product at 1400° C. for 2 to 8 hours in an oxygen stream without performing a pre-firing step, for example.

When producing a composite oxide sintered body that includes In₂Ga₂ZnO₇ having a homologous crystal structure, ZnGa₂O₄ having a spinel structure, and/or In₂O₃ having a bixbyite structure, the powder mixture is preferably heated to the sintering temperature at a temperature increase rate of 3° C./min or less, and more preferably 2° C./min or less.

It is preferable to use an oxide that produces ZnGa₂O₄ having a spinet structure due to pre-firing as a raw material powder. ZnGa₂O₄ having a spinel structure and In₂O₃ having a bixbyite structure can be easily produced by utilizing the above raw material powder.

When producing a composite oxide sintered body that includes In₂Ga₂ZnO₇ having a homologous crystal structure, ZnGa₂O₄ having a spinel structure, and/or In₂O₃ having a bixbyite structure, the powder mixture is preferably held at 600 to 1250° C. for 0.5 to 20 hours during heating (i.e., the powder mixture is sintered in two or more stages), and more preferably held at 700 to 1000° C. for 1 to 10 hours during heating. This makes it possible to easily produce a composite oxide sintered body including ZnGa₂O₄. Moreover, the average hole count is expected to reduced.

The composite oxide sintered body according to the invention may be ground to obtain a target, for example. Specifically, the composite oxide sintered body is ground using a surface grinder so that the composite oxide sintered body has a surface roughness Ra of 5 μm or less, preferably 0.3 μm or less, and more preferably 0.1 μm or less.

The sputtering side of the resulting target may be mirror-finished so that the target has an average surface roughness Ra of 1000 Å or less. The target may be mirror-finished (polished) by mechanical polishing, chemical polishing, mechanochemical polishing (combination of mechanical polishing and chemical polishing), or the like. For example, the target may be polished (#2000 or more) using a fixed abrasive polisher (polishing liquid: water), or may be lapped using a free abrasive lap (polishing agent: SiC paste or the like), and then lapped using a diamond paste. The polishing method is not particularly limited.

It is preferable to grind (polish) each side of the target by 0.3 mm or more, more preferably 0.5 mm or more, and particularly preferably 0.7 mm or more. If each side of the target is ground (polished) by 0.3 mm or more, a film having stable quality can be formed for a long time using the resulting target. If the target is ground to a large extent, the utilization efficiency of the raw material decreases (i.e., cost increases). Therefore, the target is normally ground by 5 mm or less, preferably 3 mm or less, and more preferably 2 mm or less.

When grinding a composite oxide sintered body that includes In₂Ga₂ZnO₇ having a homologous crystal structure, ZnGa₂O₄ having a spinel structure, and/or In₂O₃ having a bixbyite structure, it is preferable to grind each side of the composite oxide sintered body by 0.5 mm or more, more preferably 0.7 mm or more, and particularly preferably 0.8 mm or more. This makes it possible to reduce a variation in relative density, improve the reproducibility of film formation, and reduce the average hole count.

The target may be cleaned by blowing air, or by washing with running water, for example. When removing foreign matter by blowing air, it is effective to suck air using a dust collector from the side opposite to the nozzle.

The target may also be cleaned by ultrasonic cleaning or the like. When using ultrasonic cleaning, it is effective to produce ultrasonic waves at a frequency of 25 to 300K Hz. For example, it is preferable to perform ultrasonic cleaning while producing twelve types of ultrasonic waves at intervals of 25 KHz between 25 KHz and 300 KHz.

The target is then processed, and bonded to a backing plate to obtain a sputtering target that can be installed in a film-forming apparatus. It is preferable to use a backing plate made of copper. It is preferable to bond the target to the backing plate using indium solder.

The target is arbitrarily processed by cutting the target into a shape suitable for installation in a sputtering apparatus, or cutting the target for attaching a jig (e.g., backing plate).

The thickness of the target is normally 2 to 20 mm, preferably 3 to 12 mm, and particularly preferably 4 to 6 mm. A plurality of targets may be bonded to a single backing plate to obtain a single target.

The surface of the target is preferably finished using a diamond wheel having a grain size of #200 to #10,000, and more preferably #400 to #5000. If a diamond wheel having a grain size of less than #200 or more than #10,000 is used, the target may easily break.

An amorphous oxide film according to the invention is obtained by sputtering using the sputtering target formed of the composite oxide sintered body according to the invention at a film-forming temperature between room temperature and 450° C., and has an electron carrier density of less than 10¹⁸/cm³.

The composition of the amorphous oxide film according to the invention is normally almost identical with the composition of the sputtering target used.

The film-forming temperature is preferably 30 to 300° C.

If the film-forming temperature is less than room temperature, the resulting film may contain water due to dew condensation. If the film-forming temperature exceeds 450° C., the substrate may be deformed, or the film may break due to residual stress.

Examples of the sputtering method include direct-current (DC) sputtering, alternating-current (AC) sputtering, and radio-frequency (RF) magnetron sputtering, electron beam deposition, ion plating, and the like. Among these, DC sputtering is preferable.

When using DC sputtering, the pressure inside the chamber during sputtering is normally 0.1 to 2.0 MPa, and preferably 0.3 to 0.8 MPa. When using RF sputtering, the pressure inside the chamber during sputtering is normally 0.1 to 2.0 MPa, and preferably 0.3 to 0.8 MPa.

When using DC sputtering, the power supplied during sputtering is normally 10 to 1000 W, and preferably 100 to 300 W. When using RF sputtering, the power supplied during sputtering is normally 10 to 1000 W, and preferably 50 to 250 W.

When using RF sputtering, the power supply frequency is 50 Hz to 50 MHz, and preferably 10 kHz to 20 MHz, for example.

Examples of a carrier gas used for sputtering include oxygen, helium, argon, xenon, and krypton. It is preferable to use a mixed gas of argon and oxygen. When using a mixed gas of argon and oxygen, the flow rate ratio of argon to oxygen (Ar:O₂) is normally 100 to 80:0 to 20, and preferably 100 to 90:0 to 10.

Glass, a resin (e.g., PET or PES), or the like may be used as the substrate.

The thickness of the resulting amorphous oxide film differs depending on the film-forming time and the sputtering method, but is normally 5 to 300 nm, and preferably 10 to 120 nm, for example.

The amorphous oxide film according to the invention may suitably be used as a channel layer of a thin film transistor. A thin film transistor that includes the amorphous oxide film according to the invention as a channel layer (semiconductor layer) is described below.

FIG. 1 is a schematic cross-sectional view illustrating a thin film transistor (field effect transistor) according to one embodiment of the invention.

A thin film transistor 1 includes a substrate 10, and a gate electrode 20 formed on the substrate 10. The thin film transistor 1 includes a gate insulating film 30 that covers the gate electrode 20, and a channel layer 40 stacked on the gate insulating film 30. A source electrode 50 and a drain electrode 60 are respectively formed on the ends of the channel layer 40. The thin film transistor 1 is covered with a protective film 70 in an area other than part of the source electrode 50 and the drain electrode 60.

In the thin film transistor 1, the channel layer (semiconductor layer) is formed of the amorphous oxide film according to the invention.

Since the amorphous oxide film according to the invention is amorphous, the amorphous oxide film exhibits improved adhesion to the insulating film and the protective layer. Therefore, uniform transistor characteristics can be easily obtained even if the transistor has a large area.

Note that whether or not the semiconductor layer is an amorphous film may be determined by X-ray crystal structure analysis. The semiconductor layer is amorphous when a clear peak is not observed.

Since the amorphous oxide film according to the invention has an electron carrier density of less than 10¹⁸/cm³, the amorphous oxide film tends to become a nondegenerate semiconductor, so that the balance between the mobility and the on-off ratio is improved. Note that whether or not the semiconductor layer is a nondegenerate semiconductor may be determined by measuring a change with temperature in Hall mobility and carrier density.

The electron carrier density of the semiconductor layer (amorphous oxide film) is preferably 10¹³/cm³ or more and less than 10¹⁸/cm³, and more preferably 10¹⁴ to 10¹⁷/cm³.

The semiconductor layer can be converted into a nondegenerate semiconductor by adjusting the carrier density by controlling the amount (number) of oxygen defects by adjusting the partial pressure of oxygen during film formation, or performing a post-treatment.

If the semiconductor layer is a degenerate semiconductor, the threshold value may become negative (i.e., normally-on) due to an increase in off current and gate leakage current caused by excessive carriers.

The band gap of the semiconductor layer is preferably 2.0 to 6.0 eV, and more preferably 2.8 to 5.0 eV. If the band gap of the semiconductor layer is less than 2.0 eV, the field effect transistor may malfunction due to absorption of visible light. If the band gap of the semiconductor layer exceeds 6.0 eV, carriers may not be sufficiently supplied, so that the field effect transistor may not function.

The surface roughness (RMS) of the semiconductor layer is preferably 1 nm or less, more preferably 0.6 nm or less, and still more preferably 0.3 nm or less. If the surface roughness (RMS) of the semiconductor layer exceeds 1 nm, a decrease in mobility may occur.

The semiconductor layer is preferably an amorphous film that maintains at least part of the edge-sharing structure of the bixbyite structure of indium oxide. Whether or not an amorphous film including indium oxide maintains at least part of the edge-sharing structure of the bixbyite structure of indium oxide may be determined by determining a peak that indicates In—X (X is In or Zn) is between 0.30 nm and 0.36 nm using a radial distribution function (RDF) calculated by grazing incidence X-ray scattering (GIXS) that utilizes high-intensity synchrotron radiation or the like (F. Utsuno et al., Thin Solid Films, Volume 496, 2006, pages 95-98).

When the maximum value of the RDF between 0.30 nm and 0.36 nm is referred to as A, and the maximum value of the RDF between 0.36 nm and 0.42 nm is referred to as B, the interatomic distance preferably satisfies the relationship “A/B>0.7”, more preferably satisfies the relationship “A/B>0.85”, still more preferably satisfies the relationship “A/B>1”, and particularly preferably satisfies the relationship “A/B>1.2”.

If the ratio “NB” is 0.7 or less, a decrease in mobility or an excessive increase in threshold value and S value may occur when using the semiconductor layer as the active layer of the transistor. It is assumed that this reflects a fact that the amorphous film has poor short-range order.

The average In—In bond distance is preferably 0.3 to 0.322 nm, and more preferably 0.31 to 0.32 nm. The average In—In bond distance may be determined by X-ray absorption spectroscopy.

An extended X-Ray absorption fine structure (EXAFS) that extends from the absorption edge to several hundred eV is measured by X-ray absorption spectroscopy. The EXAFS is caused by electron backscattering due to atoms around the excited atom. An interference effect occurs between the forward-propagating waves and the backscattered waves. The interference depends on the electron state wavelength and the optical path length. A radial distribution function (RDF) is obtained by Fourier-transforming the EXAFS, and the average bond distance is estimated from the peak of the RDF.

The semiconductor layer is preferably an amorphous film that has a non-localized-level energy width (E₀) of 14 meV or less. The non-localized-level energy width (E₀) of the semiconductor layer is more preferably 10 meV or less, still more preferably 8 meV or less, and particularly preferably 6 meV or less. If the non-localized-level energy width (E₀) exceeds 14 meV, a decrease in mobility or an excessive increase in threshold value and S value may occur when using the semiconductor layer as the active layer of the transistor. It is assumed that this reflects a fact that the amorphous film has poor short-range order.

The thickness of the semiconductor layer is normally 0.5 to 500 nm, preferably 1 to 150 nm, more preferably 3 to 80 nm, and particularly preferably 10 to 60 nm. If the thickness of the semiconductor layer is within the above range, excellent TFT characteristics (e.g., mobility and on-off ratio) can be obtained.

It may be difficult to uniformly form a semiconductor layer having a thickness of less than 0.5 mm on an industrial scale. On the other hand, it may take time to form a semiconductor layer having a thickness of more than 500 mm (i.e., industrial production may be difficult).

The substrate is not particularly limited. A known substrate may be used. For example, a glass substrate (e.g., alkali silicate glass, non-alkali glass, or quartz glass), a silicon substrate, a resin substrate (e.g., acrylic resin, polycarbonate, or polyethylene naphthalate (PEN)), a polymer film substrate (e.g., polyethylene terephthalate (PET) or polyamide), or the like may be used.

The thickness of the substrate is normally 0.1 to 10 mm, and preferably 0.3 to 5 mm. It is preferable that the glass substrate be chemically or thermally reinforced. When transparency and smoothness are desired, it is preferable to use a glass substrate or a resin substrate (particularly preferably a glass substrate). It is preferable to use a resin substrate or a polymer substrate when a reduction in weight is desired.

The field effect transistor preferably includes a protective film for the semiconductor layer. If a protective film for the semiconductor layer is not provided, oxygen may be removed from the surface of the semiconductor layer under vacuum or reduced pressure, so that the off current may increase, or the threshold voltage may become negative. Moreover, the field effect transistor may be affected by humidity or the like in air, so that a variation in transistor characteristics (e.g., threshold voltage) may increase.

A protective film for the semiconductor layer may be formed of an arbitrary material. For example, SiO₂, SiN_(x), Al₂O₃, Ta₂O₅, TiO₂, MgO, ZrO₂, CeO₂, K₂O, Li₂O, Na₂O, Rb₂O, Sc₂O₃, Y₂O₃, Hf₂O₃, CaHfO₃, PbTi₃, BaTa₂O₆, SrTiO₃, AlN, or the like may be used. Among these, it is preferable to use SiO₂, SiN_(x), Al₂O₃, Y₂O₃, Hf₂O₃, or CaHfO₃, more preferably SiO₂, SiN_(x), Y₂O₃, Hf₂O₃, or CaHfO₃, and particularly preferably SiO₂, Y₂O₃, Hf₂O₃, or CaHfO₃.

The number of oxygen atoms of these oxides need not necessarily coincide with the stoichiometric ratio (e.g., SiO₂ or SiO_(x) may be used). SIN_(x) may include hydrogen.

The protective film may have a structure in which two or more different insulating films are stacked.

The protective film may be crystalline, polycrystalline, or amorphous. The protective film is preferably polycrystalline or amorphous (more preferably amorphous) from viewpoint of ease of industrial production. If the protective film is not amorphous, interfacial smoothness may be poor, so that a decrease in mobility or an excessive increase in threshold value and S value may occur.

The protective film for the semiconductor layer is preferably an amorphous oxide or an amorphous nitride, and more preferably an amorphous oxide. If the protective film is not an amorphous oxide, oxygen may move from the semiconductor layer to the protective layer, so that the off current may increase, or the threshold voltage may become negative (i.e., normally-off).

The protective film for the semiconductor layer may be an organic insulating film (e.g., poly(4-vinylphenol) (PVP) or parylene). The protective film for the semiconductor layer may have a structure in which two or more layers of an inorganic insulating film and an organic insulating film are stacked.

The gate insulating film may be formed of an arbitrary material. For example, SiO₂, SiN_(X), Al₂O₃, Ta₂O₅, TiO₂, MgO, ZrO₂, CeO₂, K₂O, Li₂O, Na₂O, Rb₂O, Sc₂O₃, Y₂O₃, Hf₂O₃, CaHfO₃, PbTi₃, BaTa₂O₆, SrTiO₃, AlN, or the like may be used. Among these, it is preferable to use SiO₂, SiN_(x), Al₂O₃, Y₂O₃, Hf₂O₃, or CaHfO₃, and more preferably SiO₂, SiN_(x), Y₂O₃, Hf₂O₃, or CaHfO₃.

The number of oxygen atoms of these oxides need not necessarily coincide with the stoichiometric ratio (e.g., SiO₂ or SiO_(x) may be used). SiN_(x) may include hydrogen.

The gate insulating film may have a structure in which two or more different insulating films are stacked.

The gate insulating film may be crystalline, polycrystalline, or amorphous. The gate insulating film is preferably polycrystalline or amorphous from the viewpoint of ease of industrial production.

The gate insulating film may be an organic insulating film (e.g., poly(4-vinylphenol) (PVP) or parylene). The gate insulating film may have a structure in which two or more layers of an inorganic insulating film and an organic insulating film are stacked.

The gate electrode, the source electrode, and the drain electrode may be formed of an arbitrary material. For example, a transparent electrode (e.g., indium tin oxide (ITO), indium zinc oxide, ZnO, or SnO₂), a metal electrode (e.g., Al, Ag, Cr, Ni, Mo, Au, Ti, Ta, or Cu), or a metal electrode formed of an alloy thereof may be used as the gate electrode, the source electrode, and the drain electrode.

If the electrode is a stacked body formed of two or more layers, the contact resistance can be reduced, and the interfacial strength can be improved. The resistance of the interface of the semiconductor layer with the electrode may be adjusted by a plasma treatment, an ozone treatment, or the like in order to reduce the contact resistance of the source electrode and the drain electrode.

In the field effect transistor according to the invention, a contact layer may be provided between the semiconductor layer and the source electrode/drain electrode. The resistance of the contact layer is preferably lower than that of the semiconductor layer.

The contact layer may be formed of a composite oxide having the same composition as that of the semiconductor layer. Specifically, the contact layer preferably includes In, Zn, Ga, and the like. If the contact layer does not include these elements, elements may move between the contact layer and the semiconductor layer, and the shift in the threshold voltage may increase when subjected to a stress test or the like.

The field effect transistor according to the invention preferably includes an oxide resistive layer having a resistance higher than that of the semiconductor layer between the semiconductor layer and the gate insulating film and/or between the semiconductor layer and the protective film.

If the oxide resistive layer is not provided, an off current may occur, the threshold voltage may become negative (i.e., normally-on), or the semiconductor layer may change in properties (i.e., deteriorate) during post-treatment (e.g., formation of the protective film or etching).

Examples of the oxide resistive layer are given below.

(1) Amorphous oxide film that is formed at a partial pressure of oxygen higher than that when stacking the semiconductor layer and has the same composition as that of the semiconductor layer

(2) Amorphous oxide film that has the same composition as that of the semiconductor layer, but differs in compositional ratio from the semiconductor layer

(3) Amorphous oxide film that includes In and Zn, and also includes an element X that is not included in the semiconductor layer

(4) Polycrystalline oxide film that includes indium oxide as the main component

(5) Polycrystalline oxide film that includes indium oxide as the main component, and is doped with one or more positive divalent elements (e.g., Zn, Cu, Co, Ni, Mn, and Mg)

When the oxide resistive layer is an amorphous oxide film that has the same composition as that of the semiconductor layer, but differs in compositional ratio from the semiconductor layer, it is preferable that the In compositional ratio be smaller than that of the semiconductor layer.

The oxide resistive layer is preferably formed of an oxide that includes In and Zn. If the oxide resistive layer does not include an oxide that includes In and Zn, elements may move between the oxide resistive layer and the semiconductor layer, and the shift in the threshold voltage may increase when subjected to a stress test or the like.

The thin film transistor according to the invention preferably has a structure (e.g., light-shielding layer) that shields the semiconductor layer from light. If the thin film transistor does not have a structure that shields the semiconductor layer from light, carrier electrons may be excited due to light that has entered the semiconductor layer, so that the off current may increase.

The light-shielding layer is preferably a thin film having absorption at 300 to 800 nm. The light-shielding layer may be provided over or under the semiconductor layer, but is preferably provided over and under the semiconductor layer.

The light-shielding layer may also be used as the gate insulating film, a black matrix, or the like. When the light-shielding layer is provided on only one side of the semiconductor layer, it is necessary to design the structure so that light is not applied to the side of the semiconductor layer where the light-shielding layer is not provided.

Each layer of the field effect transistor may be formed by a method known in the art.

A chemical film-forming method (e.g., spraying, dipping, or CVD) or a physical film-forming method (e.g., sputtering, vacuum deposition, ion plating, or pulsed laser deposition) may be used as the film-forming method. It is preferable to use the physical film-forming method since the carrier density can be easily controlled, and the quality of the film can be easily improved. It is more preferable to use sputtering due to high productivity.

Sputtering may be performed using a sintered composite oxide target, or may be performed using a plurality of sintered targets (co-sputtering), or may be performed using an alloy target (reactive sputtering). It is preferable to use a sintered composite oxide target. When using a plurality of sintered targets (co-sputtering), or an alloy target (reactive sputtering), uniformity and reproducibility may deteriorate, or the non-localized-level energy spread (E₀) may increase. As a result, the transistor characteristics may deteriorate (e.g., the mobility may decrease, or the threshold voltage may increase).

RF sputtering, DC sputtering, AC sputtering, or the like may be used. It is preferable to use DC sputtering or AC sputtering from the viewpoint of uniformity and mass productivity (equipment cost).

The resulting layer may be patterned by etching.

The semiconductor layer is preferably formed by DC or AC sputtering using the sputtering target according to the invention. When using DC or AC sputtering, damage that may occur during film formation can be reduced as compared with the case of using RF sputtering. This makes it possible to reduce the shift in the threshold voltage, increase the mobility, and reduce the threshold voltage and the S value when producing a field effect transistor, for example.

After forming the semiconductor layer, it is preferable to perform a heat treatment at 70 to 350° C. It is particularly preferable to perform a heat treatment at 70 to 350° C. after forming the semiconductor layer and the protective film for the semiconductor layer.

If the heat treatment temperature is less than 70° C., a decrease in thermal stability and heat resistance of the resulting transistor, a decrease in mobility, an increase in S value, or an increase in threshold voltage may occur. If the heat treatment temperature exceeds 350° C., a substrate that has low heat resistance may not be used. Moreover, the equipment cost may increase due to the heat treatment.

The heat treatment temperature is preferably 80 to 260° C., more preferably 90 to 180° C., and still more preferably 100 to 150° C. If the heat treatment temperature is 180° C. or less, a resin substrate (e.g., PEN) having low heat resistance can be used as the substrate.

The heat treatment time is normally 1 second to 24 hours. The heat treatment time may be adjusted depending on the heat treatment temperature.

When the heat treatment temperature is 70 to 180° C., the heat treatment time is preferably 10 minutes to 24 hours, more preferably 20 minutes to 6 hours, and still more preferably 30 minutes to 3 hours.

When the heat treatment temperature is 180 to 260° C., the heat treatment time is preferably 6 minutes to 4 hours, and more preferably 15 minutes to 2 hours.

When the heat treatment temperature is 260 to 300° C., the heat treatment time is preferably 30 seconds to 4 hours, and more preferably 1 minute to 2 hours.

When the heat treatment temperature is 300 to 350° C., the heat treatment time is preferably 1 second to 1 hour, and more preferably 2 seconds to 30 minutes.

The heat treatment is preferably performed in an inert gas having a partial pressure of oxygen of 10⁻³ Pa or less, or performed after covering the semiconductor layer with the protective layer. The reproducibility can be improved by performing the heat treatment under the above conditions.

When the thin film transistor according to the invention includes the contact layer, a contact layer having the same compositional ratio as that of the semiconductor layer may be formed under different film-forming conditions, or a contact layer that differs in compositional ratio from the semiconductor layer may be formed, or a contact layer may be formed by increasing the resistance of the contact area of the semiconductor layer with the electrode by performing a plasma treatment or an ozone treatment, or a contact layer may be formed as a layer having a resistance higher than that of the semiconductor layer by adjusting the film-forming conditions (e.g., partial pressure of oxygen) when forming the semiconductor layer, for example.

The mobility of the thin film transistor according to the invention is preferably 1 cm²/Vs or more, more preferably 3 cm²/Vs or more, and still more preferably 8 cm²/Vs or more. If the mobility of the transistor is less than 1 cm²/Vs, the transistor may not be suitable for a high-definition large-screen display due to a decrease in switching speed.

The on-off ratio of the thin film transistor according to the invention is preferably 10⁶ or more, more preferably 10⁷ or more, and still more preferably 10⁸ or more.

The off current is preferably 2 pA or less, and more preferably 1 pA or less. If the off current exceeds 2 pA, a deterioration in contrast and screen uniformity may occur when using the thin film transistor according to the invention for a display.

The gate leakage current is preferably 1 pA or less. If the gate leakage current exceeds 1 pA, deterioration in contrast may occur when using the thin film transistor according to the invention for a display.

The threshold voltage is normally 0 to 10 V, preferably 0 to 4 V, more preferably 0 to 3 V, and still more preferably 0 to 2 V. If the threshold voltage is less than 0 V (i.e., normally-on), power consumption may increase since it is necessary to apply a voltage when turning the transistor off. If the threshold voltage exceeds 10 V, power consumption may increase due to an increase in driving voltage, or high mobility may be required.

The S value of the thin film transistor according to the invention is preferably 0.8 V/dec or less, more preferably 0.3 V/dec or less, still more preferably 0.25 V/dec or less, and particularly preferably 0.2 V/dec or less. If the S value exceeds 0.8 V/dec, power consumption may increase due to an increase in driving voltage. When using the thin film transistor according to the invention for an organic EL display (DC drive), power consumption can be significantly reduced by adjusting the S value to 0.3 V/dec or less.

When increasing the gate voltage from the off state, the drain current increases steeply from the off state to the on state. The S value (swing factor) is a value that indicates the steepness. The S value refers to an increase in gate voltage when the drain current increases by one digit (10 times) (see the following expression). Svalue=dVg/d log(Ids)

The drain current increases more steeply as the S value decreases (“Thin Film Transistor Technology”, Yasuhiro Ukai, 2007, Kogyo Chosakai Publishing Co., Ltd.). If the S value is large, it is necessary to apply a high gate voltage when switching the transistor from the on state to the off state, so that power consumption may increase.

The shift in the threshold voltage when applying a DC voltage of 10 μA to the thin film transistor according to the invention at 50° C. for 100 hours is preferably 1.0 V or less, and more preferably 0.5 V or less. If the shift in the threshold voltage exceeds 1 V, a change in image quality may occur when using the thin film transistor according to the invention for an organic EL display.

It is preferable that the hysteresis be small when changing the gate voltage using a transfer curve.

The ratio W/L of the channel width W to the channel length L of the thin film transistor according to the invention is normally 0.1 to 100, preferably 0.5 to 20, and more preferably 1 to 8. If the ratio W/L exceeds 100, a leakage current may increase, and the on-off ratio may decrease. If the ratio W/L is less than 0.1, the field-effect mobility may decrease, or pinch-off may become unclear.

The channel length L is normally 0.1 to 1000 μm, preferably 1 to 100 μm, and still more preferably 2 to 10 μm. If the channel length L is less than 0.1 μm, industrial production may be difficult. Moreover, a leakage current may increase. If the channel length L exceeds 1000 μm, the device may have an unnecessarily large size.

EXAMPLES

The invention is further described below by way of examples. Note that the invention is not limited to the following examples.

Example 1 Production of Composite Oxide Sintered Body

The following oxide powders were used as starting raw material powders. The specific surface area of each oxide powder was measured by the BET method.

(a) Indium oxide powder (specific surface area: 8 m²/g)

(b) Gallium oxide powder (specific surface area: 8 m²/g)

(c) Zinc oxide powder (Specific surface area: 5 m²/g)

The oxide powders were weighed and mixed so that the ratio “(a):(b):(c)” was 50:35:15 (wt %) to prepare a raw material powder mixture. The raw material powder mixture had a specific surface area of 6.3 m²/g.

The raw material powder mixture was mixed and ground using an agitator bead mill with a wet medium while checking the specific surface area of the powder mixture. The specific surface area of the ground powder mixture was larger than that of the raw material powder mixture by 2 m²/g.

Zirconia beads having a diameter of 1 mm were used as the media of the agitator bead mill with a wet medium.

The ground powder mixture was dried using a spray dryer, put in a die (diameter: 150 mm, thickness: 20 mm), and pressed using a cold press machine to obtain a shaped body. The shaped body was sintered at 1400° C. for 2 hours in an oxygen atmosphere (in which oxygen was circulated), and reduced (heated) at 880° C. for 2 hours in an argon atmosphere to obtain a sintered body. The sintered body production conditions are shown in Table 1. A sputtering target sintered body was thus obtained without performing a pre-firing step.

The shaped body was sintered by heating the shaped body to 800° C. at a temperature increase rate of 0.9° C./min, heating the shaped body to 1100° C. at a temperature increase rate of 2.5° C./min, heating the shaped body to 1400° C. at a temperature increase rate of 5.0° C./min, and holding the shaped body at 1400° C. The shaped body was not held at a constant temperature during sintering.

The sintered body was subjected to X-ray diffraction analysis. It was confirmed that the sintered body included In₂Ga₂ZnO₇ having a homologous crystal structure, and did not include a β-Ga₂O₃ phase.

The peak area attributed to In₂Ga₂ZnO₇ having a homologous crystal structure was 99% or more of the entire peak area. A crystal peak attributed to a metal oxide other than In₂Ga₂ZnO₇ (e.g., ZnO, InGaO₃, and In₂O₃(ZnO)₃) was not observed.

It was confirmed that each element was uniformly dispersed by the EPMA area analysis map of 1n, Ga, Zn, and O.

The nitrogen content in the sintered body was 5 ppm or less. The nitrogen content in the sintered body was measured using a total nitrogen analyzer (TN analyzer). The total nitrogen analyzer is used for elemental analysis of the nitrogen (N) content, or the nitrogen (N) content and the carbon (C) content.

The total nitrogen analyzer decomposes a nitrogen-containing inorganic substance or a nitrogen-containing organic substance in the presence of a catalyst so that nitrogen is converted into nitrogen monoxide (NO). The NO gas is subjected to a gas-phase reaction with ozone, and light is emitted by chemiluminescence. The nitrogen content is quantitatively determined from the luminous intensity.

The following X-ray diffraction measurement conditions were used.

Apparatus: “Ultima-III” manufactured by Rigaku Corporation

X-rays: Cu—Kα radiation (wavelength: 1.5406 Å, monochromatized using a graphite monochromator) 2θ-θ reflection method, continuous scan (1.0°/min)

Sampling interval: 0.02°

Slit DS, SS: 2/3°, RS: 0.6 mm

The relative density, a variation in relative density, the average crystal grain size, the bulk resistance (mΩ·cm), the maximum difference in density, the average hole count, the appearance (color non-uniformity), and the presence or absence of cracks in the sintered body were evaluated by the following methods. The results are shown in Table 1.

(1) Relative Density

Samples were cut from an arbitrary ten areas of the sintered body. The density of each sample was calculated by the Archimedes method, and the average density of the samples was taken as the relative density of the sintered body.

(2) Variation in Relative Density

Samples were cut from an arbitrary ten areas of the sintered body. The density of each sample was calculated by the Archimedes method, and a variation in relative density calculated by the following expression based on the average density, the maximum density, and the minimum density. Variation in relative density=(maximum density−minimum density)/average density×100(%) (3) Average Crystal Grain Size

The sintered body was buried in a resin. The surface of the sintered body was polished using alumina particles (particle size: 0.05 μm), and observed using an X-ray microanalyzer (EPMA) (“JXA-8621 MX” manufactured by JEOL Ltd.) (magnification: 5000). The maximum diameter of crystal particles observed on the surface of the sintered body within a square range of 30×30 μm was measured. The maximum diameter thus measured was taken as the average crystal grain size.

(4) Bulk Resistance

The bulk resistance of the sintered body was measured in an arbitrary ten areas by a four-probe method (JIS R 1637) using a resistance meter (“Loresta” manufactured by Mitsubishi Chemical Corporation), and the average value was taken as the bulk resistance of the sintered body.

(5) Average Hole Count

The sintered body was mirror-polished in an arbitrary direction, and then etched. The texture was observed using a scanning electron microscope (SEM), and the number of holes having a diameter of 1 μm or more per unit area was counted.

(6) Appearance (Color Non-Uniformity)

The sintered body was observed with the naked eye at a position 50 cm away from the sintered body (north window light), and evaluated as follows.

Excellent: No color non-uniformity was observed.

Good: Almost no color non-uniformity was observed.

Fair: Some color non-uniformity was observed.

Bad: Color non-uniformity was observed.

When the sintered body has color non-uniformity, it may be difficult to determine the state of the target during use, for example.

(7) Cracks

The sintered body was observed with the naked eye at a position 50 cm away from the sintered body (north window light), and the presence or absence of cracks was determined.

Good: No cracks were observed.

Bad: Cracks were observed.

[Production of Sputtering Target]

A target sintered body was cut from the sintered body. The side of the target sintered body was cut using a diamond cutter, and the surface was ground using a surface grinder to obtain a target material having a surface roughness Ra of 5 μm or less. The surface of the target material was cleaned by blowing air, and then subjected to ultrasonic cleaning for 3 minutes while producing twelve types of ultrasonic waves at intervals of 25 KHz between 25 KHz and 300 KHz. The target material was then bonded to a backing plate made of oxygen-free copper using indium solder to obtain a target. The sputtering target had a surface roughness Ra of 0.5 μm or less, and had a ground surface without directivity.

[Production of TFT Panel]

A bottom-gate TFT element was produced by the following steps.

Molybdenum metal (200 nm) was deposited by RF sputtering on a glass substrate at room temperature, and patterned by wet etching to obtain a gate electrode. SiO_(x) was then formed in a film on the substrate using a plasma-enhanced chemical vapor deposition apparatus (PECVD apparatus) to obtain a gate insulating film. The sputtering target was installed in a DC magnetron sputtering apparatus, and an amorphous oxide film was formed on the gate insulating film at a film-forming temperature of 50° C. The electron carrier density of the amorphous oxide film measured using a Hall effect measuring apparatus (manufactured by Toyo Corporation) was 5×10¹⁷/cm³. The amorphous oxide film was then patterned by dry etching to form a semiconductor layer (thickness: 40 nm). SiO_(x) was then formed in a film by PECVD, and patterned by dry etching (RIE) to obtain a first protective layer (etch stopper). A Ti/Al/Ti stacked film was then formed by DC sputtering. The Ti/Al/Ti stacked film was then patterned by dry etching (RIE) to form a source electrode and a drain electrode. SiN_(x) was then formed in a film as a second protective layer using a PECVD apparatus, and a contact hole was formed (i.e., connected to an external wire). The substrate was then heated at 280° C. for 1 hour in air to obtain a transistor having a channel length of 10 μm and a channel width of 100 μm. One hundred (10×10) thin film transistors (TFT) were formed on the substrate (TFT panel) at equal intervals.

The characteristics of each transistor formed on the TFT panel were evaluated. Each transistor (excluding three transistor that were short-circuited (gate)) had a field-effect mobility of 8 to 10 cm²/(V·sec) and a threshold voltage of 0.5 to 2.0 V. Almost no difference in characteristics was observed between the adjacent thin film transistors (TFT).

Thin film transistors (5 batches) were successively produced using the sputtering target, and the characteristics of the TFT panel were evaluated by the following methods. The results are shown in Table 1.

(8) Uniformity of TFT Characteristics

The ratio (maximum value/minimum value) of the maximum value to the minimum value of the on current (Vg=6 V) of a single panel was calculated. The ratio (maximum value/minimum value) was evaluated in accordance with the following standard.

Excellent: 1.05 or less

Good: 1.10 or less

Fair: 1.20 or less

Bad: More than 1.20

(9) Reproducibility of TFT Characteristics

The ratio of the average field-effect mobility of the first batch to the average field-effect mobility of the fifth batch (first batch/fifth batch) was calculated. The average field-effect mobility ratio was evaluated in accordance with the following standard.

Excellent: 1.10 or less

Good: 1.20 or less

Fair: 1.50 or less

Bad: More than 1.50

Examples 2 to 7

A sintered body was produced and evaluated, and a TFT panel was produced and evaluated in the same manner as in Example 1, except for using starting raw material powders shown in Table 1, and producing the sintered body under conditions shown in Table 1. The results are shown in Table 1.

Examples 8 to 15

A sintered body was produced and evaluated, and a TFT panel was produced and evaluated in the same manner as in Example 1, except for using starting raw material powders shown in Table 2, and producing the sintered body under conditions shown in Table 2. The results are shown in Table 2.

In Examples 8 to 15, tin oxide, zirconium oxide, germanium dioxide, cerium oxide, niobium oxide, tantalum oxide, molybdenum oxide, or tungsten oxide (i.e., oxide of a metal element having a positive valence of 4 or more) was used as the starting raw material powder so that the atomic ratio of the metal element having a positive valence of 4 or more to the total metal elements was 0.0005.

As shown in Table 2, the evaluation results for the relative density, a variation in relative density, the bulk resistance, and the average hole count were improved.

Example 16

The following oxide powders were used as starting raw material powders. The specific surface area of each oxide powder was measured by the BET method.

(a) Indium oxide powder (specific surface area: 8 m²/g)

(b) Gallium oxide powder (specific surface area: 8 m²/g)

(c) Zinc oxide powder (specific surface area: 5 m²/g)

The indium oxide powder (a), the gallium oxide powder (b), and the zinc oxide powder (c) were weighed so that the atomic ratio “In:Ga:Zn” was 2:2:1, and mixed at 3000 rpm for 4 minutes in air using a super mixer. The powder mixture was pre-fired at 1000° C. for 5 hours in air inside an electric furnace.

The calcined powder mixture was put in an attritor together with zirconia beads, and mixed and ground at 300 rpm for 3 hours. Water was added to the raw material powder to prepare a slurry having a solid content of 50%, followed by granulation at an inlet temperature of 200° C. and an outlet temperature of 120° C.

The granulated powder was pressed (uniaxial shaping) at a surface pressure of 400 kgf/cm² for 1 minute, and subjected to CIP (using an isostatic pressing apparatus) at a surface pressure of 2100 kgf/cm² for 5 minutes to obtain a shaped body.

The shaped body was placed in an electric furnace, heated to 800° C. at a temperature increase rate of 1.0° C./min in an oxygen stream, held at 800° C. for 5 hours, heated to 1400° C. at a temperature increase rate of 1.0° C./min, and held at 1400° C. for 20 hours. The sintered body was then furnace-cooled.

After grinding the outer circumferential surface of the sintered body (thickness: 6.6 mm), each side of the sintered body was ground by 0.8 mm to obtain a target sintered body having a thickness of 5.0 mm.

The sintered body was evaluated in the same manner as in Example 1, and a TFT panel was produced and evaluated in the same manner as in Example 1. The results are shown in Table 3.

A target sintered body having low bulk resistance was thus obtained without performing a reduction treatment. It is assumed that such a target sintered body was obtained due to the presence of In₂O₃ having a bixbyite structure. A variation in relative density, the average hole count, and the reproducibility of the TFT characteristics were improved. It is conjectured that such results were obtained since the shaped body was held at 800° C. for 5 hours.

Example 17

A sintered body was produced in the same manner as in Example 16, except that the shaped body was sintered at 1370° C. for 12 hours.

The sintered body was evaluated in the same manner as in Example 1, and a TFT panel was produced and evaluated in the same manner as in Example 1. The results are shown in Table 3.

As a result of X-ray diffraction analysis, it was confirmed that the ground target sintered bodies obtained in Examples 16 and 17 mainly included In₂Ga₂ZnO₇ having a homologous crystal structure, and also included ZnGa₂O₄ having a spinel structure and In₂O₃ having a bixbyite structure.

Note that the expression “mainly includes In₂Ga₂ZnO₇ having a homologous crystal structure” means that the peak area attributed to In₂Ga₂ZnO₇ having a homologous crystal structure determined by X-ray diffraction analysis accounts for 50% or more of the total area. The peak area attributed to In₂Ga₂ZnO₇ having a homologous crystal structure preferably accounts for 80% or more, more preferably 90% or more, and particularly preferably 95% or more, of the total area.

An abnormal discharge did not occur when forming an amorphous oxide film by sputtering using a sputtering target formed of the sintered body obtained in Example 16 or 17.

Comparative Example 1

Production of Composite Oxide Sintered Body

The following oxide powders were used as starting raw material powders.

(a′) Indium oxide powder (4N, specific surface area: 3 m²/g)

(b′) Gallium oxide powder (4N, specific surface area: 3 m²/g)

(c′) Zinc oxide powder (4N, specific surface area: 2 m²/g)

The oxide powders were weighed so that the ratio “(a′):(b′):(c′)” was 45:30:25 (wt %), put in a 500 ml polyamide container charged with 200 g of zirconia beads (diameter: 2 mm), and wet-mixed for 1 hour using a planetary ball mill (manufactured by Fritz Japan) to prepare a powder mixture. Ethanol was used as the dispersion medium.

The powder mixture was pre-fired at 1000° C. for 5 hours in air inside an alumina crucible, and ground using the planetary ball mill. The pre-fired powder was formed in the shape of a disc (diameter: 20 mm) by uniaxial pressing (100 kg/m²), fired at 1400° C. for 2 hours in air, and heated at 880° C. for 2 hours in an argon atmosphere to obtain a sintered body.

The sintered body was evaluated in the same manner as in Example 1. The results are shown in Table 4.

A sputtering target was produced, and a TFT panel was produced and evaluated in the same manner as in Example 1, except for using the sintered body obtained in Comparative Example 1. The results are shown in Table 4.

Comparative Examples 2, 4, 5, and 6

A sintered body was produced and evaluated, and a TFT panel was produced and evaluated in the same manner as in Example 1, except for using starting raw material powders shown in Table 4, and producing the sintered body under conditions shown in Table 4. The results are shown in Table 4.

Comparative Example 3

A sintered body was produced and evaluated, and a TFT panel was produced and evaluated in the same manner as in Comparative Example 1, except for using starting raw material powders shown in Table 4, and producing the sintered body under conditions shown in Table 4. The results are shown in Table 4.

In Comparative Examples 1 and 3, the raw material powders were dried by 12 hours of air-drying instead of using a spray dryer.

The sintered bodies obtained in Comparative Examples 1 to 6 were subjected to X-ray diffraction analysis. It was confirmed that the sintered bodies obtained in Comparative Examples 1 to 6 included In₂Ga₂ZnO₇ having a homologous crystal structure, a β-Ga₂O₃ phase, InGaZnO₄ (JCPDS card No. 38-1104), ZnGa₂O₄(JCPDS card No. 38-1240), In₂O₃ (JCPDS card No. 06-041), and the like. The results are shown in Table 4.

TABLE 1 Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Production Specific surface area In₂O₃ 8 8 8 8 8 12 6 conditions [m²/g] Ga₂O₃ 8 8 8 8 8 12 6 ZnO 5 5 5 5 5 8 3 Specific surface Before mixing 6.3 6.3 6.3 6.3 6.3 9.7 4.4 area of powder mixture and grinding After mixing 8.3 8.3 8.3 8.3 8.3 11.8 6.4 and grinding Granulation method Spray Spray Spray Spray Spray Spray Spray dryer dryer dryer dryer dryer dryer dryer Pre-firing step Not Not Not Not Not Not Not performed performed performed performed performed performed performed Sintering atmosphere Oxygen Oxygen Oxygen Oxygen Oxygen Oxygen Oxygen stream stream stream stream stream stream stream Sintering temperature 1400 1400 1400 1400 1350 1400 1400 [° C.] Sintering time 2 4 8 10 4 2 2 [h] Properties of Composition In₂Ga₂ZnO₇ Good Good Good Good Good Good Good sintered body β-Ga₂O₃ — — — — — — — InGaZnO₄ — — — Good — — — ZnGa₂O₄ — — — Good — — — In₂O₃ — — — — — — — (In,Ga)₂O₃ — — — — — — — Relative density Average 97.0 99.1 99.0 94.1 99.1 96.0 98.1 [%] Maximum 97.2 99.2 99.2 94.3 99.2 96.2 98.3 Minimum 96.8 99.0 98.8 93.9 98.9 95.7 97.9 Variation in relative density 0.41 0.20 0.40 0.43 0.30 0.52 0.41 Crystal grain size 4 4 8 9 4 3 5 [μm] Bulk resistance 3.8 3.2 5.8 25 4.1 4.8 3.7 [mΩ · cm] Average hole count 80 70 60 400 70 80 60 [per/mm²] Appearance Excellent Excellent Excellent Excellent Excellent Excellent Excellent Cracks Good Good Good Good Good Good Good TFT Sputtering method DC DC DC DC DC DC DC characteristics Uniformity Excellent Excellent Excellent Excellent Excellent Excellent Excellent Reproducibility Excellent Excellent Excellent Good Excellent Excellent Excellent

TABLE 2 Exam- Exam Exam- Exam- Exam- Example 8 Example 9 Example 10 ple 11 ple 12 ple 13 ple 14 ple 15 Production Specific surface In₂O₃ 8 8 8 8 8 8 8 8 conditions area [m²/g] Ga₂O₃ 8 8 8 8 8 8 8 8 ZnO 5 5 5 5 5 5 5 5 Metal element having Sn Zr Ge Ce Nb Ta Mo W positive valence of 4 or more Specific surface Before mixing 6.4 6.4 6.4 6.4 6.4 6.4 6.4 6.4 area of powder and grinding mixture After mixing 8.4 8.4 8.4 8.4 8.4 8.4 8.4 8.4 and grinding Granulation method Spray Spray Spray Spray Spray Spray Spray Spray dryer dryer dryer dryer dryer dryer dryer dryer Pre-firing step Not Not Not Not Not Not Not Not performed performed performed performed performed performed performed performed Sintering atmosphere Oxygen Oxygen Oxygen Oxygen Oxygen Oxygen Oxygen Oxygen stream stream stream stream stream stream stream stream Sintering temperature 1400 1400 1400 1400 1400 1400 1400 1400 [° C.] Sintering time 2 2 2 2 2 2 2 2 [h] Properties of Composition In₂Ga₂ZnO₇ Good Good Good Good Good Good Good Good sintered body β-Ga₂O₃ — — — — — — — — InGaZnO₄ — — — — — — — — ZnGa₂O₄ — — — — — — — — In₂O₃ — — — — — — — — (In,Ga)₂O₃ — — — — — — — — Relative density Average 99.3 99.3 99.2 99.3 99.1 99.2 99.4 99.2 [%] Maximum 99.4 99.4 99.3 99.4 99.3 99.4 99.5 99.3 Minimum 99.1 99.2 99.0 99.1 98.9 99.0 99.2 99.1 Variation in relative density 0.30 0.20 0.30 0.30 0.40 0.40 0.30 0.20 Crystal grain size 3 3 3 3 3 3 3 3 [μm] Bulk resistance 2.4 2.3 2.4 2.2 2.6 2.5 2.3 2.2 [mΩ · cm] Average hole count 40 30 50 25 50 45 30 30 [per/mm²] Appearance Excellent Excellent Excellent Excellent Excellent Excellent Excellent Excellent Cracks Good Good Good Good Good Good Good Good TFT Sputtering method DC DC DC DC DC DC DC DC characteristics Uniformity Excellent Excellent Excellent Excellent Excellent Excellent Excellent Excellent Reproducibility Excellent Excellent Excellent Excellent Excellent Excellent Excellent Excellent

TABLE 3 Example 16 Example 17 Production Specific In₂O₃ 8 8 conditions surface area Ga₂O₃ 8 8 [m²/g] ZnO 5 5 Mixing method Super mixer Super mixer Granulation method Spray dryer Spray dryer Pre-firing step Performed Performed Sintering atmosphere Oxygen stream Oxygen stream First-stage Sintering 800 800 sintering temperature [° C.] Holding time [h] 5 5 Second-stage Sintering 1400 1370 sintering temperature [° C.] Holding time [h] 20 12 Reduction treatment Not performed Not performed Properties of Composition In₂Ga₂ZnO₇ Good (Main Good (Main sintered body component) component) β-Ga₂O₃ — — InGaZnO₄ — — ZnGa₂O₄ Good Good In₂O₃ Good Good (In,Ga)₂O₃ — — Relative Average 99.3 98.0 density Maximum 99.4 98.2 [%] Minimum 99.2 97.8 Variation in relative density 0.20 0.20 Crystal grain size [μm] 3 3 Bulk resistance [mΩ · cm] 2.9 3.1 Average hole count [per/mm²] 30 40 Appearance Excellent Excellent Crackes Good Good TFT Sputtering method DC DC characteristics Abnormal discharge Did not occur Did not occur Uniformity Excellent Excellent Reproducibility Excellent Excellent

TABLE 4 Com. Ex. 1 Com. Ex. 2 Com. Ex. 3 Com. Ex. 4 Com. Ex. 5 Com. Ex. 6 Production Specific surface In₂O₃ 3 3 16 8 8 8 conditions area [m²/g] Ga₂O₃ 3 3 16 8 8 8 ZnO 2 2 16 5 5 5 Specific surface Before mixing 2.5 2.5 16 6.5 6.5 6.5 area of powder and grinding mixture After mixing 4.4 4.4 18.5 8.5 8.5 8.5 and grinding Granulationo method Air-drying Spray dryer Air-drying Spray dryer Spray dryer Spray dryer Pre-firing step Performed Not performed Performed Not performed Not performed Not performed Sintering atmosphere Air Oxygen stream Air Oxygen stream Oxygen stream Oxygen stream Sintering temperature 1400 1400 1400 1400 1150 1500 [° C.] Sintering time 2 10 2 40 2 2 [h] Properties of Composition In₂Ga₂ZnO₇ Good Good Good — — — sintered body β-Ga₂O₃ Good Good Good — Good — InGaZnO₄ — — — Good Good — ZnGa₂O₄ — — — Good Good — In₂O₃ — — — — Good — (In,Ga)₂O₃ — — — — — Good Relative density Average 88.1 94.5 81.8 98.0 78.0 94.5 [%] Maximum 88.8 94.8 83.3 98.5 78.8 94.8 Minimum 87.3 94.1 80.2 97.4 77.2 94.1 Variation in relative density 1.70 0.74 3.79 1.12 2.05 0.74 Crystal grain size 18 16 13 22 6 18 [μm] Bulk density 180 160 200 3.8 300 400 [mΩ · cm] Average hole count 900 600 1100 120 2800 2100 [per/mm²] Appearance Good Excellent Fair Excellent Fair Bad Cracks Good Good Good Bad Good Bad TFT Sputtering method RF RF RF DC RF RF characteristics Uniformity Fair Fair Fair Good Bad Bad Reproducibility Bad Bad Bad Fair Bad Bad

INDUSTRIAL APPLICABILITY

The composite oxide sintered body according to the invention may be used as a sputtering target. A thin film formed using the sputtering target according to the invention may be used as a channel layer of a transistor.

Although only some exemplary embodiments and/or examples of the invention have been described in detail above, those skilled in the art will readily appreciate that many modifications are possible in the exemplary embodiments and/or examples without materially departing from the novel teachings and advantages of the invention. Accordingly, all such modifications are intended to be included within the scope of the invention.

The documents cited in the specification are incorporated herein by reference in their entirety. 

The invention claimed is:
 1. A composite oxide sintered body comprising, In₂Ga₂ZnO₇ having a homologous crystal structure, and one or two structures selected from ZnGa₂O₄ having a spinel structure and In₂O₃ having a bixbyite structure, the composite oxide sintered body and having a relative density of 90% or more.
 2. The composite oxide sintered body according to claim 1, the composite oxide sintered body having an average crystal grain size of 10 μm or less.
 3. The composite oxide sintered body according to claim 1, the composite oxide sintered body consisting essentially of In₂Ga₂ZnO₇ having a homologous crystal structure.
 4. The composite oxide sintered body according to claim 1, the composite oxide sintered body having a bulk resistance of 30 mΩ·cm or less.
 5. The composite oxide sintered body according to claim 1, the composite oxide sintered body having a variation in relative density in a plane direction of 1% or less, and an average hole count of 800 or less per mm².
 6. The composite oxide sintered body according to claim 1, the composite oxide sintered body not including a β-Ga₂O₃ phase.
 7. The composite oxide sintered body according to claim 1, wherein the atomic ratio of the composite oxide sintered body satisfies the following expressions: 0.30≦In/(In+Zn+Ga)≦0.60, 0.30≦Ga/(In+Zn+Ga)≦0.60, and 0.10≦Zn/(In+Zn+Ga)≦0.40.
 8. The composite oxide sintered body according to claim 1, further comprising a metal element having a positive valence of 4 or more, as part of an additional phase, the atomic ratio of the metal element having a positive valence of 4 or more to the total metal elements being 0.0001 to 0.2.
 9. The composite oxide sintered body according to claim 8, wherein the metal element having a positive valence of 4 or more is one or more elements selected from tin, zirconium, germanium, cerium, niobium, tantalum, molybdenum, and tungsten.
 10. A method of producing a composite oxide sintered body according to claim 1, comprising producing a shaped body using an indium oxide powder having a specific surface area of 4 to 14 m²/g, a gallium oxide powder having a specific surface area of 4 to 14 m²/g, and a zinc oxide powder having a specific surface area of 2 to 13 m²/g, and sintering the shaped body at 1250 to 1490° C. for 2 to 35 hours in an oxygen atmosphere.
 11. The method according to claim 10, comprising mixing an indium oxide powder having a specific surface area of 6 to 10 m²/g, a gallium oxide powder having a specific surface area of 5 to 10 m²/g, and a zinc oxide powder having a specific surface area of 2 to 4 m²/g to obtain a powder mixture having a specific surface area of 5 to 8 m²/g, increasing the specific surface area of the powder mixture by 1.0 to 3.0 m²/g by mixing and grinding the powder mixture using an agitator bead mill with a wet medium, and shaping the powder mixture that has been increased in specific surface area to obtain a shaped body.
 12. A sputtering target comprising the composite oxide sintered body according to claim
 1. 13. An amorphous oxide film obtained by sputtering using the sputtering target according to claim 12 at a film-forming temperature between room temperature and 450° C., the amorphous oxide film having an electron carrier density of less than 10¹⁸/cm³.
 14. A thin film transistor comprising the amorphous oxide film according to claim 13 as a channel layer.
 15. A composite oxide sintered body comprising In₂Ga₂ZnO₇ having a homologous crystal structure, and having a relative density of 90% or more and further comprising ZnGa₂O₄ having a spinel structure.
 16. A composite oxide sintered body comprising In₂Ga₂ZnO₇ having a homologous crystal structure, and having a relative density of 90% or more and further comprising In₂O₃ having a bixbyite structure. 